Photoconduction and structural properties of amorphous selenium-sulphur semiconductors
| Autor: | M.F. Kotkata, Laszlo S. Toth, M. Füstöss-Wegner, G. Zentai, S. A. Nouh |
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| Rok vydání: | 1993 |
| Předmět: |
Photocurrent
Acoustics and Ultrasonics business.industry Photoconductivity Analytical chemistry chemistry.chemical_element Mineralogy Dielectric Condensed Matter Physics Indentation hardness Sulfur Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Semiconductor chemistry law Crystallization business Selenium |
| Zdroj: | Journal of Physics D: Applied Physics. 26:456-460 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/26/3/018 |
| Popis: | The effect of sulphur addition on some structural properties of a-Se was studied for compositions up to about 30 at.% S. The sulphur in the binary amorphous semiconductor system Se-S was found to affect the density (d), microhardness (VH), dielectric constant ( in ) and tendency to crystallization (Tc-Tg), as well as the spectral response and the temperature dependence of the photocurrent in different ways. The compositional dependence of d, VH, in and Tc-Tg showed an irregular behaviour up to about 5 at.% S, with the highest (or lowest) value at the composition 0.2 at.% S, after which the character of the compositional dependence is almost monotonic. The photoconductivity results are discussed on the basis of these results, showing that the recombination processes in pure selenium and in sulphur-contaminated selenium differ from each other. |
| Databáze: | OpenAIRE |
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