Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
| Autor: | Jingtian Fang, Pan Wang, Jin Chen, Daniel M. Fleetwood, Rong Jiang, Erin C. H. Kyle, Xiao Shen, Stephen W. Kaun, Ronald D. Schrimpf, James S. Speck, Sokrates T. Pantelides, En Xia Zhang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science 010308 nuclear & particles physics business.industry Transconductance Algan gan 01 natural sciences Temperature measurement Noise (electronics) Electronic Optical and Magnetic Materials Threshold voltage Stress (mechanics) Logic gate 0103 physical sciences Optoelectronics Degradation (geology) Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 18:364-376 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2018.2847338 |
| Popis: | Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN HEMTs fabricated via two different process methods. Both positive and negative threshold voltage $V_{\mathbf{th}}$ shifts are observed for each device type, depending on the mode and duration of the stress, indicating the presence of significant densities of donor-like and acceptor-like traps. Worst-case stress bias for transconductance degradation is the “ON” state for both device types. We find that transconductance degradation provides a more effective parameter to monitor defect buildup than $V_{\mathbf{th}}$ shifts, and that a single worst-case stressing bias condition cannot be defined for all varieties of AlGaN/GaN HEMTs. Low-frequency noise measurements versus temperature assist the identification of defects responsible for the observed degradation. Defect dehydrogenation and oxygen impurity centers are found to be particularly significant to the response of these devices. |
| Databáze: | OpenAIRE |
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