Effects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process
| Autor: | Nan Wang, Qing Ge, Sumei Wu, Weiwei Jiang, Wanyu Ding, Chaoqian Liu, Xiao-Yang Zhang, Hualin Wang, Ting-Ting Lun, Xiao-Na Zhai, Shimin Liu, Meng-Si Song |
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| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
Materials science Scanning electron microscope Non-blocking I/O Doping Biomedical Engineering Analytical chemistry Bioengineering 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Electrical resistivity and conductivity Impurity General Materials Science 0210 nano-technology Sol-gel Diffractometer |
| Zdroj: | Micro & Nano Letters. 15:540-544 |
| ISSN: | 1750-0443 |
| DOI: | 10.1049/mnl.2019.0241 |
| Popis: | The sol–gel method based on the rapid pyrolysis process was adopted to prepare Ni1−x Cu x O (x = 0–0.1) films on glass substrates. The effects of Cu doping on the structural, morphological, electrical and optical properties of the films were characterised by X-ray diffractometer, scanning electron microscope, Hall effect instrument and ultraviolet-visible spectrophotometer, respectively. The NiO-based films have a cubic rock salt structure and it was found that the film with x = 0.06 should have minimal residual stress. The transmittance and bandgap of the films decreased with increasing Cu-doping concentration. In addition, the compactness of the films increased along with the increase of Cu-doping concentration as a whole. The carrier concentration of the films was almost invariable, but the carrier mobility was determined by the competition between the effects of the morphology and the ionised impurity scattering. The resistivity of the films first decreases and then increases, and the minimum resistivity was 182.1 Ω cm at x = 0.06. |
| Databáze: | OpenAIRE |
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