Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter
| Autor: | Wan Lin Jiang, Samantha K. Murray, Herbert De Vleeschouwer, Olivier Trescases, Mohammad Shawkat Zaman, Jaume Roig, Peter Moens |
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| Rok vydání: | 2021 |
| Předmět: |
Temperature control
Materials science business.industry 020208 electrical & electronic engineering 05 social sciences Silicon on insulator High voltage 02 engineering and technology Logic level Glitch Reliability (semiconductor) Logic gate Power electronics 0202 electrical engineering electronic engineering information engineering Optoelectronics 0501 psychology and cognitive sciences business 050107 human factors |
| Zdroj: | 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| Popis: | This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high-voltage floating level-shifter with glitch prevention; and 3) a monolithic half-bridge with integrated fixed-strength gate-drivers. Together, they facilitate on-chip active gate-driving, improving the reliability of GaN power ICs. The blocks were fabricated on separate dies using imec’s 200 V GaN-on-SOI process. A controllable dv DS /dt from 68 V/ns to 112 V/ns at room temperature is achieved using the segmented gate-driver. An oscillation-free v DS switching of the half-bridge at 200 V and 5 MHz is demonstrated through experimental results. |
| Databáze: | OpenAIRE |
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