A hydrogen-related complex defect model in a-Si:H

Autor:	Dai Guo-Cai, Deng Conghao, Guan Da-Ren
Rok vydání:	1985
Předmět:	CNDO/2 Hydrogen Chemistry Vacancy defect Materials Chemistry Ceramics and Composites chemistry.chemical_element Condensed Matter Physics Molecular physics Differential (mathematics) Symmetry (physics) Electronic Optical and Magnetic Materials
Zdroj:	Journal of Non-Crystalline Solids. :103-106
ISSN:	0022-3093
Popis:	The electronic energies were calculated for a model of hydrogen-related complex defects in a-Si:H, which has Td symmetry, being a hybride quartet. Using the complete neglect of differential overlap CNDO method, we find the probability of the formation of the hybride quartet in a-Si:H. It is concluded that the hybride quartet is a plausible complex model of hydrogen-related defects in a-Si:H than the hydrogenated vacancy with four SiH bonds unrelated one another.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::de72507dc06ae340c0004ce8f3b4777b https://doi.org/10.1016/0022-3093(85)90621-0 Zobrazit plný text záznamu