Carrier-mediated antiferromagnetic interlayer exchange coupling in Ga co-doped (Zn, Ni)O-based multilayers
| Autor: | Y.H. Shen, M. Luo |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
RKKY interaction Condensed matter physics Doping 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Coupling (electronics) Condensed Matter::Materials Science Nuclear magnetic resonance Ferromagnetism 0103 physical sciences Carrier mediated Antiferromagnetism Condensed Matter::Strongly Correlated Electrons Density functional theory Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Co doped |
| Zdroj: | Optik. 127:10705-10709 |
| ISSN: | 0030-4026 |
| DOI: | 10.1016/j.ijleo.2016.08.108 |
| Popis: | Interlayer exchange coupling in (Zn, Ni)O multilayers is investigated by density functional theory calculations. We mainly study the effect of the nonmagnetic spacer and carrier in controlling the IEC between the magnetic layers separated by ZnO layers. It is found that, for the pure ZnO layers, the coupling between the two magnetic (Zn,Ni)O layers is always ferromagnetic, which is well interpreted by a gaped two-band model of RKKY interaction. However, the antiferromagnetic coupling is observed by Ga doping, which is in connection with the ZnO layers’s thickness and the Ga atoms’s sites. The p–d hybridization mechanism plays an important role in switching FM coupling to AFM coupling. |
| Databáze: | OpenAIRE |
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