Study of uniformity of high performance AlInN HEMT with ultra‐thin barrier

Autor:	Lin Zhou, Paul Saunier, Shiping Guo, Xiang Gao, Daniel Gorka, David J. Smith, Andrew Ketterson
Rok vydání:	2011
Předmět:	Materials science business.industry Sharp interface Optoelectronics High-electron-mobility transistor Condensed Matter Physics business Sheet resistance Communication channel
Zdroj:	physica status solidi c. 8:2081-2085
ISSN:	1610-1642 1862-6351
Popis:	High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::de67f9245c4b502fddd7de67d844a24d https://doi.org/10.1002/pssc.201001069 Zobrazit plný text záznamu Plný text