Textured Silicon Heterojunction Solar Cells With Over 700 mV Open-Circuit Voltage Studied by Transmission Electron Microscopy
| Autor: | Olibet, S., Monachon, C., Hessler-Wyser, A., Vallat-Sauvain, E., De Wolf, S., Fesquet, L., Damon-Lacoste, J., Ballif, C. |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: | |
| DOI: | 10.4229/23rdeupvsec2008-2do.1.2 |
| Popis: | 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1140-1144 In this article, we report on the use of transmission electron microscopy (TEM) for the fabrication of high-performance textured amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction (HJ) solar cells. Whereas classical thin-film characterization techniques allowed us to optimize the a-Si:H layer properties for flat HJ solar cells (open-circuit voltages (VOC) up to 710 mV and energy conversion efficiencies up to 19.1%), these techniques can not always be fully exploited on textured c-Si surfaces. Nevertheless, in this situation, TEM micrographs permit us to identify device performance limiting factors, such as, e.g., local epitaxy in pyramid valleys as the main source of our VOC-loss. Minimizing this local epitaxy by adjusting the amorphous Si based layers growth conditions and improving the c-Si surface morphology yields Si HJ solar cells with VOCs over 700 mV. |
| Databáze: | OpenAIRE |
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