Fast growth of n-type 4H-SiC bulk crystal by gas-source method
| Autor: | Emi Makino, Yuichiro Tokuda, Norihiro Hoshino, Takahiro Kanda, Naohiro Sugiyama, Hidekazu Tsuchida, Jun Kojima, Hironari Kuno, Isaho Kamata |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Void (astronomy) Materials science 020502 materials Doping Analytical chemistry chemistry.chemical_element 02 engineering and technology Condensed Matter Physics 01 natural sciences Nitrogen Inorganic Chemistry Crystal Crystallography 0205 materials engineering chemistry 0103 physical sciences Materials Chemistry Growth rate Seed crystal Bulk crystal |
| Zdroj: | Journal of Crystal Growth. 478:9-16 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.08.004 |
| Popis: | Fast growth of n-type 4H-SiC crystals was attempted using a high-temperature gas-source method. High growth rates exceeding 9 mm/h were archived at a seed temperature of 2550 °C, although the formation of macro-step bunching caused doping fluctuation and voids in the grown crystal. We investigated a trade-off between growth-rate enhancement and macro-step formation and how to improve the trade-off. By controlling the growth conditions, the growth of highly nitrogen-doped 4H-SiC crystals without the doping fluctuation and void formation were accomplished under a high growth rate exceeding 3 mm/h, maintaining the density of threading screw dislocations in the same level with the seed crystal. The influence of growth parameters on nitrogen incorporations into grown crystals was also surveyed. |
| Databáze: | OpenAIRE |
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