Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses
| Autor: | Tatsuya Okada, Hiroyuki Kawahara, Shuichi Hashimoto, Ryota Kumai, Makoto Yamaguchi, Takuro Tomita, Shigeki Matsuo |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Crystal structure Condensed Matter Physics Laser Molecular physics law.invention Amorphous solid Optics Mechanics of Materials law Transmission electron microscopy Femtosecond General Materials Science Irradiation business Single crystal Layer (electronics) |
| Zdroj: | Materials Science Forum. :883-886 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.883 |
| Popis: | We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different. |
| Databáze: | OpenAIRE |
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