An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices
| Autor: | Bernhard Loeffler, Andrea Kraxner, Martin Faccinelli, Peter Hadley, Evelin Fisslthaler, Frederic Roger, Rainer Minixhofer |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology 01 natural sciences Signal Electronic Optical and Magnetic Materials 0103 physical sciences Cathode ray Electronic engineering Optoelectronics Charge carrier Electrical and Electronic Engineering Diffusion (business) Current (fluid) 0210 nano-technology business Technology CAD |
| Zdroj: | IEEE Transactions on Electron Devices. 63:4395-4401 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2606703 |
| Popis: | A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a semiconducting device and then drift-diffusion equations are solved to determine the resulting current. The simulation provides a map of the EBIC signal, which can be compared with experimental 2-D profiles. This comparison can be used to fit parameters such as the surface recombination rate which is otherwise difficult to fit in completed devices. Additional experimental data for these fits are obtained by performing the experiments at different electron beam energies and thereby generating carriers at different depths in the sample. The experiments were performed on cross sections of silicon photodiodes with varying surface preparations. A strong influence of the surface preparation method on the charge carrier diffusion was observed. |
| Databáze: | OpenAIRE |
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