Room-temperature scanning photoluminescence for mapping the lifetime and the doping density in compound semiconductors
| Autor: | S.K. Krawczyk, M.F. Nuban |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Materials science
Photoluminescence business.industry Mechanical Engineering Doping Analytical chemistry Computer Science::Software Engineering Condensed Matter Physics Crystallographic defect Characterization (materials science) Condensed Matter::Materials Science Semiconductor Mechanics of Materials Optoelectronics General Materials Science Photoluminescence excitation Dislocation business Excitation |
| Zdroj: | Materials Science and Engineering: B. 28:452-456 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(94)90104-x |
| Popis: | It is demonstrated that room-temperature spectrally integrated scanning photoluminescence (I-SPL) measurements can provide direct information on the spatial uniformity of the non-radiative lifetime and of the doping density in compound semiconductor substrates. This new experimental approach is based on I-SPL measurements performed at different excitation levels. The data obtained are treated using a simple theoretical model and the software developed in this work. |
| Databáze: | OpenAIRE |
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