Metal-Insulator Transition inSrTiO3−xThin Films Induced by Frozen-Out Carriers

Autor: Y. L. Zhao, Ariando, Kalon Gopinadhan, Shengwei Zeng, W. M. Lü, Xiang-Bin Wang, D. P. Leusink, Zhiqi Liu, Thirumalai Venkatesan, Amar Srivastava, Anil Annadi, Xiaohu Huang, Zhen Huang, Sankar Dhar
Rok vydání: 2011
Předmět:
Zdroj: Physical Review Letters. 107
ISSN: 1079-7114
0031-9007
DOI: 10.1103/physrevlett.107.146802
Popis: We report optical, electrical and magnetotransport properties of oxygen deficient ${\mathrm{SrTiO}}_{3}$ (${\mathrm{SrTiO}}_{3\ensuremath{-}x}$) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (${\mathrm{O}}_{\mathrm{vac}}$) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk ${\mathrm{SrTiO}}_{3\ensuremath{-}x}$, it was found that ${\mathrm{O}}_{\mathrm{vac}}$ in bulk ${\mathrm{SrTiO}}_{3\ensuremath{-}x}$ is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the ${\mathrm{SrTiO}}_{3\ensuremath{-}x}$ film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field.
Databáze: OpenAIRE