Growth of Ca2Si layers on Mg2Si/Si(111) substrates

Autor:	Hirokazu Tatsuoka, T. Ono, M. Kuramoto, Nose Yasuo, Hiroshi Kuwabara, H. Matsui
Rok vydání:	2002
Předmět:	Diffraction Scanning electron microscope Crystal chemistry Analytical chemistry Mineralogy Crystal growth Structural property Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound chemistry Transmission electron microscopy Silicide Materials Chemistry Thin film
Zdroj:	Journal of Crystal Growth. :2121-2124
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)02276-x
Popis:	Single phase Ca 2 Si layers are successfully grown on Mg 2 Si/Si substrates for the first time. These Mg 2 Si and Ca 2 Si layers are formed by heat treatment of Si and Mg 2 Si/Si substrates in Mg and Ca vapor, respectively. The replacement of Ca atoms with Mg in Mg 2 Si leads to the formation of single phase Ca 2 Si layers. It is confirmed that the formation of other silicide phases is suppressed, when the layers are grown under optimum growth time. The structural property of the resultant layers is examined by X-ray diffraction technique, scanning electron microscopy and transmission electron microscopy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::de5428ca6fc67af8c1a2d2d366ee1fdd https://doi.org/10.1016/s0022-0248(01)02276-x Zobrazit plný text záznamu Full Text from ScienceDirect