Theoretical framework for performance evaluation of silicon quantum dot solar cell under low concentration illumination
| Autor: | Brijesh Tripathi, Zeel Purohit |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Theory of solar cells Materials science business.industry 02 engineering and technology Quantum dot solar cell 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Polymer solar cell law.invention Solar cell efficiency law 0103 physical sciences Solar cell Equivalent circuit Optoelectronics General Materials Science Electrical and Electronic Engineering 0210 nano-technology business Current density Short circuit |
| Zdroj: | Superlattices and Microstructures. 100:627-640 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2016.10.036 |
| Popis: | This article describes a silicon quantum dot (Si QD) solar cell with absorption enhancement due to quantum-confinement in the front-side emitter region, which helps in the improvement of the short-circuit current density. The Si QD solar cell is theoretically mimicked using an equivalent circuit to account the possible recombination losses under low concentration illumination. The electrical output is estimated using proposed theoretical model by considering the fundamental properties of intrinsic Si reported in the literature. An increase of ∼7.5% in generated current density is observed due to extra absorption of incident radiation through Si QD, which is in accordance with the experimental findings. The performance of Si QD/c-Si solar cell has been studied with respect to low concentration illumination, wherein with increasing CR from 1 sun to 5 suns, the short circuit current density increases from 29.4 to 147.2 mA/cm 2 and the open circuit voltage increases from 0.565 to 0.609 V. This study provides a theoretical framework for design optimization of a future Si QD solar cells to achieve better performance of the device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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