Annealed semi-insulating p-type InP grown by the Czochralski technique with Cu in the melt
Autor: | K. Zdansky, Pavel Hlídek, L. Pekarek |
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Rok vydání: | 2006 |
Předmět: |
Absorption spectroscopy
Chemistry Annealing (metallurgy) Analytical chemistry Infrared spectroscopy Conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials symbols.namesake Fourier transform N type conductivity Hall effect Materials Chemistry symbols Electrical and Electronic Engineering Semi insulating |
Zdroj: | Semiconductor Science and Technology. 21:1256-1260 |
ISSN: | 1361-6641 0268-1242 |
Popis: | InP crystals were grown by the Czochralski technique with an admixture of Cu in the melt. Samples of as-grown crystals were of n-type conductivity with the estimated concentration of Cu smaller than 5 × 1015 cm−3. The samples were converted to the p-type semi-insulating state by annealing at 500 °C followed by fast cooling. The annealed samples were investigated by temperature-dependent Hall measurements and low-temperature Fourier transform infrared absorption. New peaks around 2100 cm−1 were interpreted as due to Cu2+ 3d internal transitions. |
Databáze: | OpenAIRE |
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