Fast PEALD ZnO Thin-Film Transistor Circuits
| Autor: | Dalong Zhao, Jie Sun, Thomas N. Jackson, Devin A. Mourey |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Ring oscillator High-electron-mobility transistor Electronic Optical and Magnetic Materials law.invention Threshold voltage Atomic layer deposition Thin-film transistor law Optoelectronics Electrical and Electronic Engineering Thin film business Electronic circuit |
| Zdroj: | IEEE Transactions on Electron Devices. 57:530-534 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2009.2037178 |
| Popis: | We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition. Using PEALD, we have deposited highly crystalline (002) textured ZnO thin films at a low temperature (200°C). Using PEALD ZnO films, we have fabricated high-mobility TFTs (20-30 cm2/V ·s), which have < 100-mV threshold voltage shifts after bias stress at 80°C for 20 000 s. Using these high-performance TFTs, we have also fabricated simple 15-stage ring oscillator circuits with a propagation delay of 22 ns/stage for a supply voltage of 16 V, which, to the best of our knowledge, are the fastest ZnO TFT circuits reported to date. |
| Databáze: | OpenAIRE |
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