Hot Carrier Enhanced Read Disturb and Scaling Effects in a Localized Trapping Storage SONOS Type Flash Memory Cell

Autor:	Wen-Jer Tsai, S. Pan, Charles C. C. Liu, N.K. Zous, Chih-Yuan Lu, C.H. Chen, Tahui Wang, Chih Chieh Yeh, S.K. Cho
Rok vydání:	2002
Předmět:	Materials science business.industry Charge trap flash Optoelectronics Trapping business Scaling Flash memory
Zdroj:	Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2002.a-6-3
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::de2a2048fd66cce0324f33097060c204 https://doi.org/10.7567/ssdm.2002.a-6-3 Zobrazit plný text záznamu