Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy
| Autor: | Eddy Simoen, Niamh Waldron, Po-Chun Brent Hsu, A. Vais, Nadine Collaert, Hao Yu |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Deep-level transient spectroscopy business.industry 0211 other engineering and technologies 02 engineering and technology Electron 01 natural sciences 021105 building & construction 0103 physical sciences Optoelectronics business Transient spectroscopy Surface states Diode |
| Zdroj: | 2019 19th International Workshop on Junction Technology (IWJT). |
| Popis: | Electron traps are detected from vertical n+-GaAs/n−-InGaP/p+-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (t w ) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper. |
| Databáze: | OpenAIRE |
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