Autor: |
K. von Klitzing, Karl Eberl, Sergey Suchalkin, M. K. Zundel, Yu. B. Vasilyev, G. Nachtwei |
Rok vydání: |
2001 |
Předmět: |
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Zdroj: |
Physica B: Condensed Matter. 298:230-233 |
ISSN: |
0921-4526 |
DOI: |
10.1016/s0921-4526(01)00308-8 |
Popis: |
Far-infrared experiments have been performed on the two-dimensional electron gas (2DEG) of an AlGaAs/GaAs heterojunction with additional self-organized AlInAs antidot islands located at the interface. The electron density has been varied from 9×10 9 to 3×10 11 cm −2 by applying a gate voltage. In addition to the CR peak we observe a narrow line which lies above the CR peak. The width of the line is as small as 0.5 cm −1 at filling factors less than 1. In contrast to the CR peak this line displays a considerable shift toward higher energies when the electron density is increased. We discuss the observed features in terms of the formation of a correlated phase of electrons localized in local minima originating from the antidot potential and coupled via Coulomb interaction. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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