High-resolution real-time X-ray topography of dislocation generation in silicon
| Autor: | Shih-Lin Chang, Werner Hagen, Werner Hartmann, Hans-Joachim Queisser, Helmut Baumgart |
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| Rok vydání: | 1982 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Metals and Alloys X-ray High resolution chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Quality (physics) Optics chemistry General Materials Science Dislocation business Image resolution |
| Zdroj: | Philosophical Magazine A. 46:1009-1013 |
| ISSN: | 1460-6992 0141-8610 |
| DOI: | 10.1080/01418618208236946 |
| Popis: | Generation of screw and 60° dislocation half-loops in silicon single crystals have been continuously observed, for the first time, with a high-resolution live X-ray topographic arrangement. A videotape has been made of the creation as well as of the motion of the dislocations. The spatial resolution achieved is about 8–10 μm. The real-time images are comparable in quality to the high-resolution topographic images recorded on conventional emulsion plates. |
| Databáze: | OpenAIRE |
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