| Autor: |
Hakim Tahi, Slimane Oussalah, A. Mokrani, R. Yefsah, B. Mansouri, Boualem Djezzar, A. Smatti, M. Benabdelmoumen, M. Mehlous |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 IEEE International Conference on Semiconductor Electronics. |
| DOI: |
10.1109/smelec.2008.4770368 |
| Popis: |
The OTCP extraction method is compared to C-V one for two radiation doses, 500 Krad and 1Mrad. It is shown that the radiation induced oxide-trap (DeltaNot) obtained by OTCP are in excellent agreement with DeltaNot extracted using C-V. However, for interface-trap density (DeltaNit), most DeltaNit values extracted by C-V method in MOS capacitors are 70% less than those measured using OTCP in P- and N-MOS transistors. This underestimation is probably due to the fact that C-V scans interface-trap less than C-P in forbidden band energy. In addition, the OTCP method can give the radiation induced border-trap (DeltaNbt). Hence, we have confirmed that OTCP is more precise, direct and reliable method than C-V to predict radiation-induced interface-, oxide-, and border-trap in MOS transistors in order to evaluate their impact on devices intended for space and medical applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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