A Drain Current and Transconductance Analytical Model for Symmetric Double Gate Junctionless FENT
| Autor: | N. Deka, Rupaban Subadar, Nipanka Bora |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Optoelectronics Double gate 0210 nano-technology business Drain current |
| Zdroj: | Journal of Nano Research. 65:39-50 |
| ISSN: | 1661-9897 |
| DOI: | 10.4028/www.scientific.net/jnanor.65.39 |
| Popis: | This paper presents an analytical model of various electrical parameters for an ultra thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). The model works for all the regions of operation of the nanowire transistor without using any fitting parameter. The surface potential is derived based on the solutions of Poisson’s and current continuity equations by using appropriate boundary conditions. The Pao–Sah double integral was used to obtain the drain current, transconductance and drain conductance. The results obtained from analytical model are validated by comparing with GENIUS 3D TCAD simulations. The simplicity of the model makes it appropriate to be a SPICE compatible model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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