High-speed Graded-channel GaN HEMTs with Linearity and Efficiency
| Autor: | Erdem Arkun, Andrea Corrion, Joel Wong, James M. Chappell, Nivedhita Venkatesan, Peter Chen, Isaac Khalaf, M. Antcliffe, Chuong Dao, Patrick Fay, Bob Grabar, Jeong-Sun Moon |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier 020208 electrical & electronic engineering Linearity 02 engineering and technology High-electron-mobility transistor 01 natural sciences Overcurrent Power (physics) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Ka band business Power density Communication channel |
| Zdroj: | 2020 IEEE/MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/ims30576.2020.9223775 |
| Popis: | We report high-speed graded-channel GaN HEMTs with 10 dB OIP3 improvement over current conventional AlGaN/GaN HEMTs at the same DC power. Thus, the graded-channel GaN HEMTs demonstrated a record OIP3/Pdc of 17 - 20 dB at 30 GHz. Also, these graded-channel GaN HEMTs demonstrated PAE of 75 % at 1.2 W/mm output power density. The measured PAE and output power density show great improvement over reported PAE of other mm-wave T-gated AlGaN/GaN HEMT devices. |
| Databáze: | OpenAIRE |
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