Low-temperature annealing of SIMOX structures in an inhomogeneous temperature field
| Autor: | B. V. Mochalov, V. I. Rudakov, Yu. I. Denisenko |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Condensed matter physics Low oxygen Annealing (metallurgy) chemistry.chemical_element Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials Temperature gradient Nuclear magnetic resonance chemistry Materials Chemistry Oxygen distribution Electrical and Electronic Engineering |
| Zdroj: | Russian Microelectronics. 29:324-330 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1007/bf02773284 |
| Popis: | SIMOX structures were subjected to low-temperature annealing under a temperature gradient in a mild (with a low oxygen content) atmosphere. The effect of the temperature gradient on the oxygen distribution was studied. The oxygen distributions obtained under oppositely directed gradients (∇T = ±100 degree/cm) were found to substantially differ from each other. Possible mechanisms of formation of buried insulating layers in an inhomogeneous temperature field are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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