| Autor: |
Vimal Kamineni, Junli Wang, Susan Su Chen Fan, Andre Labonte, Ruilong Xie, Dinesh Gupta, Raja Muthinti, Juntao Li, Dechao Guo, Ryan Kevin J, B. Peethala, Richard Conte, Christopher Prindle, Veeraraghavan S. Basker, Shanti Pancharatnam, Kangguo Cheng, Albert M. Young, Stan D. Tsai, Huiming Bu, H. P. Amanapu, Chanro Park, Balasubramanian S. Haran, Robert R. Robison, Nicolas Loubet, Y. Liang, Huimei Zhou, Kisik Choi, Richard A. Conti, Andreas Knorr, Cave Nigel, Adra Carr, Saraf Iqbal Rashid, Andrew M. Greene, Michael P. Belyansky, Hao Tang, Mark Raymond |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Symposium on VLSI Technology. |
| Popis: |
We demonstrate a novel self-aligned gate contact (SAGC) scheme with conventional oxide/nitride materials that allows superior process integration for scaling while simplifying the SRAM cross-couple wiring. We show that the key feature to avoid both gate-contact (CB) to source-drain local interconnect (LI) shorts and the LI-contact (CA) to gate shorts is the shape of the LI cap. A trapezoid-shaped oxide (SiO 2 ) LI cap with an appropriate taper angle eliminates shorting between the contacts in the gate and source-drain region. We further demonstrate that this oxide LI cap is fully compatible with Cobalt (Co) metallization with a novel selective tungsten (W) growth process. Additionally, this process enables the SRAM cross-couple (XC) in the same metallization level, eliminating the need for an upper level wiring and greatly simplifying routing in the SRAM cell. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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