Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
| Autor: | Yuan Liao, Qihong Wu, Qing-Xuan Yu, Rong-Chuan Fang, Guanzhong Wang, Bo Xu, Ching-Ting Lee, Hsin Ying Lee |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) business.industry Phonon Wide-bandgap semiconductor Physics::Optics Heterojunction Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science law Optoelectronics Physics::Chemical Physics business Layer (electronics) Light-emitting diode Diode |
| Zdroj: | Applied Physics Letters. 83:4713-4715 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1632029 |
| Popis: | We report on photoluminescence in a ZnO/GaN heterostructure, which showed a donor–acceptor pair emission band at 3.270 eV and the longitudinal optical phonon replicas at 12 K. In comparison with p-type GaN, the positions of the peaks are redshifted. This may be associated with the variation of the residual strain in the GaN layer of the heterostructure. Using this heterostructure, near-ultraviolet light-emitting diodes were fabricated and their electroluminescence properties were characterized. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|