Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode
| Autor: | Hyobong Hong, Hyunjin Cho, Sung-Nam Lee, Chel-Jong Choi, Myung Jong Kim, Yeon-Ho Kil, Jae-Chan Jeong, Kyu-Hwan Shim, Zagarzusem Khurelbaatar |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Infrasound Schottky barrier chemistry.chemical_element Germanium Thermionic emission 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences General Materials Science Electrical and Electronic Engineering Diode 010302 applied physics Equivalent series resistance Condensed matter physics business.industry Graphene Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Superlattices and Microstructures. 91:306-312 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2016.01.029 |
| Popis: | We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current–voltage ( I–V ) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height ( Ф B ), ideality factor ( n ), and series resistance ( R s ), were extracted using the forward I–V and Cheung's methods. The Ф B and n extracted from the forward ln (I)–V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the Ф B and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of Ф B calculated from the forward I–V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz–1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current. |
| Databáze: | OpenAIRE |
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