A Study of Metal Impurities Behavior due to Difference in Isolation Structure on ULSI Devices

Autor:	Hidekazu Yamamoto, Yoji Mashiko, Kazuhito Matsukawa
Rok vydání:	2002
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Doping General Engineering General Physics and Astronomy Substrate (electronics) Electron diffraction Impurity Getter Shallow trench isolation Optoelectronics Wafer LOCOS business
Zdroj:	Japanese Journal of Applied Physics. 41:5900-5903
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.41.5900
Popis:	We have studied the behavior of metal impurities such as Cu and Ni with different isolation techniques in ULSI devices. We have found by using convergent beam electron diffraction (CBED) that the stress in a shallow trench isolation (STI) structure is larger than that of a local-oxidation-of-silicon (LOCOS) structure. With LOCOS, the highly doped substrate efficiently gettered Cu. However, with STI, a small amount of Cu diffused to the device area because of the high stress. On the other hand, high density of bulk micro defect (BMD) generated with the thermal processing of STI effectively getters Ni impurities. With the LOCOS-based wafer, a large amount of Ni diffuses to the device region because of the low BMD density.
Databáze:	OpenAIRE
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