Etch Rate Modification of SiO[sub 2] by Ion Damage
| Autor: | Rémy Charavel, Jean-Pierre Raskin |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
inorganic chemicals
Aqueous solution Argon Materials science General Chemical Engineering fungi Inorganic chemistry technology industry and agriculture Oxide chemistry.chemical_element macromolecular substances Catalysis chemistry.chemical_compound Hydrofluoric acid stomatognathic system chemistry Etching (microfabrication) Electrochemistry General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry Boron Buffered oxide etch |
| Zdroj: | Electrochemical and Solid-State Letters. 9:G245 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.2200307 |
| Popis: | Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized for aqueous and vapor hydrofluoric acid (HF). Destruction by implantation of Si-O bonds makes oxide more reactive to HF. Water being reaction product and catalyst for oxide etching, its amount controls the reaction kinetic. In aqueous solution selectivity of four between implanted and unimplanted oxide is reached but increases up to 200 in vapor HF. In the case of HF etching under vapor phase the generated water increases the etch rate. This technique opens many process possibilities such as etch stop layer development, etching of buried trenches, definition of MEMS anchors, etc. (c) 2006 The Electrochemical Society. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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