NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

Autor: Kun-Hsien Lee, Cheng Tung Huang, Chia-Wen Liang, Osbert Cheng, Wen-Han Hung, Li-Shian Jeng, M. L. Tseng, Shyh-Fann Ting
Rok vydání: 2006
Předmět:
Zdroj: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2006.f-6-1
Databáze: OpenAIRE