Effective sticking coefficient measurement of radicals for a-SIN:H film growth in plasma CVD

Autor:	Masataka Narita, Shinji Fujikake, Yukimi Ichikawa
Rok vydání:	2006
Předmět:	Sticking coefficient Materials science Radical Monte Carlo method Analytical chemistry Energy Engineering and Power Technology Nanotechnology Wafer Plasma Electrical and Electronic Engineering Amorphous silicon nitride
Zdroj:	Electrical Engineering in Japan. 156:9-15
ISSN:	1520-6416 0424-7760
DOI:	10.1002/eej.20343
Popis:	The reaction coefficients of radicals on the growing surface of hydrogenated amorphous silicon nitride (a-SiN:H) were studied by applying Monte Carlo simulation. These a-SiN:H films were deposited on trench-patterned silicon wafers using two kinds of gas mixture, SiH4−NH3 and SiH4−N2, and then measured for their film thickness profiles and composition on the trench wall. The derived total loss coefficient, β, of radicals was estimated from comparison between the experimental results and the simulation. On the basis of these results, the main radicals during depositions will be discussed. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 156(3): 9– 15, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20343
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ddb5a0f9ddb708326e4366cc62806b2d https://doi.org/10.1002/eej.20343 Zobrazit plný text záznamu Plný text