| Autor: |
Lutz Herrmann, Gernot Krause, Falk Graetsch, Martin Trentzsch, R. Geilenkeuser |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 IEEE International Integrated Reliability Workshop Final Report. |
| DOI: |
10.1109/irws.2009.5383032 |
| Popis: |
This work shows how fast wafer-level reliability (fWLR) inline tests allow to quickly screen the intrinsic reliability of High-k / Metal Gate (HK/MG) process splits in an effective manner. Various Hf based gate stack compositions such as pure HfO 2 , Hf x Zr 1-x O 2 and Hf x Si 1-x O 2 are investigated from a reliability point of view. The main focus lies on PBTI (positive bias temperature instability) which is one of the most critical reliability concerns in current HK/MG stacks. As a key result, PBTI was found to improve when doping the HfO 2 with either silicon or zirconium. Since HK/MG technology also introduces more process parameters to be controlled, it is shown that with fWLR tests implemented in a wafer electrical test environment their influence on reliability can be evaluated much faster than with standard lab approaches. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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