Growth of device quality p-type μc-Si:H films by hot-wire CVD for a-Si pin and c-Si heterojunction solar cells
| Autor: | H Seitz, Chandrachur Mukherjee, B. Schröder, Urban Weber |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Open-circuit voltage Metals and Alloys Analytical chemistry chemistry.chemical_element Heterojunction Surfaces and Interfaces Chemical vapor deposition Dopant Activation Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry law Solar cell Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 395:310-314 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(01)01283-4 |
| Popis: | We report on the growth of highly conducting p-μc-Si:H films by hot-wire CVD. A systematic variation of the doping gas (trimethylboron) ratio was first carried out. High dark conductivity, σD≈1.0 Ω−1 cm−1 and low activation energy of dark conductivity, Ea≈62 meV have been achieved for thick films. For thin films (d≈20 nm), σD≈4.7×10−2 Ω−1 cm−1 and Ea≈80 meV were obtained. The annealing characteristics of thick films show thermally assisted dopant activation. Microcrystalline growth in these films was verified by XRD. A very thin p-a-Si:H seed layer (d≈2 nm) was grown for preparation on TCO-coated substrates prior to the deposition of the p-μc-Si:H layer. The incorporation of a p-μc-Si:H layer into a-Si:H p-i-n solar cells has improved the open circuit voltage (870–900 mV) relative to the use of a p-a-SiC:H layers. At present the best I–V parameters for p-i-n and μc-Si/c-Si heterjunction solar cells are Jsc=12.3 mA cm−2, Voc=873 mV, FF=72%, η=7.8% and Jsc=26.6 mA cm−2, Voc=532 mV, FF=74%, and η=10.6%, respectively. To the best of our knowledge, these are the first heterojunction solar cells with the p-μc-Si:H emitter grown by HWCVD. The necessity of a seed layer has been found to be very much important in both types of solar cells. Two different types of seed layers, and their thickness variation, were also investigated. |
| Databáze: | OpenAIRE |
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