| Autor: |
Jay T. Scheuer, Anthony Renau, D. Brennan, Antonella Cucchetti, S.S. Todorov, J.C. Olson |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432). |
| DOI: |
10.1109/iit.2000.924181 |
| Popis: |
The design of the VSIIta 810 medium current implanter successfully addresses the needs of advanced semiconductor manufacturing by meeting the challenges of high productivity and reduced defect density. Data are presented verifying that the beamline design reduces the risk of defect production from particulate and metallic contamination while ensuring energy parity. Tuning time, reliability, dose uniformity and repeatability data demonstrate high productivity of the VIISta 810 for a wide range of energies, charge states and implant species for 200 mm and 300 mm wafers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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