CMOS-compatible zero-mask One Time Programmable (OTP) memory design
| Autor: | Ricky M. Y. Ng, Mansun Chan, M.C. Lee, Wan Tim Chan, Tsz Yin Man, K. C. Kwong, Lin Li, Kwok Ping Ng |
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| Rok vydání: | 2008 |
| Předmět: |
Engineering
business.industry Schottky diode Hardware_PERFORMANCEANDRELIABILITY Zero (linguistics) CMOS Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Electronic engineering Breakdown voltage Hardware_ARITHMETICANDLOGICSTRUCTURES business Cmos process One time programmable Hardware_LOGICDESIGN Cmos compatible Diode |
| Zdroj: | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology. |
| DOI: | 10.1109/icsict.2008.4734679 |
| Popis: | A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were fabricated in standard 0.18-?m CMOS technology to verify the functionality of the design. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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