The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Autor: Yu Sun, Mark Aindow, Kurt W. Kolasinski, William B. Barclay
Rok vydání: 2015
Předmět:
Zdroj: Electrochimica Acta. 158:219-228
ISSN: 0013-4686
DOI: 10.1016/j.electacta.2015.01.162
Popis: The metals Ag, Au, Pd and Pt were deposited as nanoparticles onto H-terminated Si(100) wafers and single crystal Si chunks to act as catalysts for electroless etching induced by the presence of a strong oxidant in HF(aq). This process is known as metal assisted etching (MAE). Aqueous solutions of V 2 O 5 + HF and HOOH + HF were investigated. The stoichiometry of MAE in V 2 O 5 + HF solutions depended on the chemical identity of the metal. The stoichiometry when etching with Ag and Au was the same as previously determined for electroless Si etching in V 2 O 5 + HF solutions in the absence of a metal catalyst. With Pd and Pt nanoparticles the stoichiometry is significantly different, consuming more V 2 O 5 and producing less H 2 per mole of Si etched. This indicates that the metal catalyst changes the mechanism of etching, implicating the polarization induced by the metal nanoparticle in the etch mechanism. Etching in V 2 O 5 + HF was well behaved and gave consistently reproducible kinetic results. In contrast, we were unable to obtain well-behaved stoichiometries for HOOH + HF solutions. This is related to heightened sensitivity on reaction conditions compared to the V 2 O 5 system as well as nonlinearities introduced by side reactions.
Databáze: OpenAIRE