MBE-grown nanoheterostructures with increased electron mobility
| Autor: | D. M. Krasovitskii, V. P. Chalyi, V. K. Nevolin, S. I. Petrov, K. A. Tsarik, A. N. Alekseev |
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| Rok vydání: | 2012 |
| Předmět: |
Electron mobility
Materials science business.industry Heterojunction Gallium nitride Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Scanning probe microscopy chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering Dislocation business High potential Molecular beam epitaxy |
| Zdroj: | Russian Microelectronics. 41:400-404 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | Multilayered nitride heterostructures AlN/AlGaN/GaN/AlGaN are grown using a Nanofab-100 multichamber domestic complex involving a STE3N3 specialized installation of molecular beam epitaxy. The obtained heterostructures have high structural quality, smooth morphology, and a low dislocation density, which demonstrates the high potential of the nanotechnological complex. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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