Laser‐assisted metalorganic molecular beam epitaxy of GaAs
| Autor: | F. A. Baiocchi, M. G. Lamont, Vincent M. Donnelly, J. C. Beggy, V. R. McCrary, Timothy D. Harris, Reginald C. Farrow, Charles W. Tu |
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| Rok vydání: | 1988 |
| Předmět: |
Photoluminescence
Materials science Physics and Astronomy (miscellaneous) Excimer laser business.industry medicine.medical_treatment Epitaxy Laser Fluence law.invention chemistry.chemical_compound Optics chemistry law medicine Optoelectronics Triethylgallium Thin film business Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 52:1065-1067 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.99212 |
| Popis: | We report preliminary studies of the growth of homoepitaxial GaAs by laser‐assisted metalorganic molecular beam epitaxy, using triethylgallium (TEGa) and As4 sources and a 193 nm ArF excimer laser. Laser irradiation results in a high, selective‐area growth rate at temperatures below 450 °C, where pyrolytic growth is very slow. The process is extremely efficient, with roughly unit probability for impinging TEGa molecules sticking and being dissociated by laser radiation to form GaAs. From the strong dependence on laser fluence, the growth enhancement process appears to be pyrolytic in nature (because of transient heating by the pulsed laser) and not photolytic. The cross section for photolysis must be at least ten times lower than the gas‐phase value (9×10−18 cm2). The surface morphology of films grown at 400 °C is rough at threshold fluences (∼0.10 J/cm2), but becomes smooth at higher fluences (∼0.13 J/cm2). These regions with relatively smooth surfaces exhibit enhanced photoluminescence yields compared t... |
| Databáze: | OpenAIRE |
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