The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma
| Autor: | Ling Zhu, Xiaodong Hu, Zhijian Yang, Huapu Pan, Tao Dai, Z. Z. Gan, K. Xu, Guoyi Zhang, Bei Zhang, Rui Li |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Plasma etching technology industry and agriculture Oxide Analytical chemistry Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Getter Etching (microfabrication) Sputtering Materials Chemistry Reactive-ion etching Stoichiometry |
| Zdroj: | Journal of Crystal Growth. 298:375-378 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2006.11.018 |
| Popis: | In this study, the etching characteristics of Al x Ga 1 − x N/GaN superlattices with x =0.11 and 0.21 of Al and n-GaN with Cl 2 /SiCl 4 /Ar plasma using reactive ion etching (RIE) system were investigated. By varying gas ratio and rf power, it was found that SiCl 4 is an effective getter to remove residual oxygen in the chamber and has a strong physical sputtering effect to remove the oxide layer during the etching, and a nearly nonselective smooth etching of Al x Ga 1− x N/GaN SLs with the high etch rate of 220 nm/min could be obtained. X-ray photoelectron spectroscopy (XPS) and Hall measurements were employed together to reveal the correlation between stoichiometry and electrical changes of n-GaN induced by plasma etching. Combining with N 2 O plasma post-etch treatments to restore etched surfaces, those results suggested that oxygen not only influences morphology of the Al-containing samples, but also electrical properties of n-GaN by changing the status of oxygen-related defects, which may play crucial roles in determining the nature of the damage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect