Investigation of SiO2 deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilane
| Autor: | Kunio Okimura, Naohiro Horii, Akira Shibata |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Metals and Alloys
Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Mass spectrometry Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Isotopic labeling chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Mass spectrum Molecule Spectroscopy Electron ionization |
| Zdroj: | Thin Solid Films. :148-151 |
| ISSN: | 0040-6090 |
| Popis: | Dissociations in plasma enhanced chemical vapor deposition for SiO 2 deposition using tetraethoxysilane (TEOS) were investigated by means of mass spectrometry and optical emission spectroscopy. First, we showed mass spectra and optical emission spectra in discharge of TEOS and He mixture. It was shown that CO molecules are produced by electron impact dissociation of TEOS without oxidant gas. Next, we performed isotopic labeling studies using 18 O 2 in order to clarify a role of added oxygen for dissociation of TEOS. The mass spectrometric signal with isotope shifts showed that C 18 O, C 16 O 18 O,C 18 O 2 , 16 O 18 O and H 2 18 O were main products of oxidation promoting dissociation of TEOS. It is found that oxygen gas plays an indispensable role for dissociation of TEOS in the plasma. |
| Databáze: | OpenAIRE |
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