Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Autor:	Jen-Chung Lou, Ji Chen, Ya-Chi Hung, Kuan-Chang Chang, Tsung-Ming Tsai, Simon M. Sze, Cheng-Hsien Wu, Tian-Jian Chu, Chih-Hung Pan, Min-Chen Chen, Ting-Chang Chang, Jin-Cheng Zheng, Yong-En Syu, Rui Zhang
Rok vydání:	2015
Předmět:	business.industry Inorganic chemistry chemistry.chemical_element Nitrogen Redox Oxygen Electronic Optical and Magnetic Materials Indium tin oxide Resistive random-access memory chemistry Electrode Optoelectronics Electrical and Electronic Engineering business Tin Layer (electronics)
Zdroj:	IEEE Electron Device Letters. 36:1138-1141
ISSN:	1558-0563 0741-3106
Popis:	In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar $I$ – $V$ characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dd820856602742d8b2eebdebc072319d https://doi.org/10.1109/led.2015.2477163 Zobrazit plný text záznamu