Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200 °C
Autor: | Ran He, Tadatomo Suga, Masahisa Fujino, Seiki Sakuyama, Masatake Akaike, Taiji Sakai |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Hydrogen Formic acid Inorganic chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 01 natural sciences Surface activated bonding chemistry.chemical_compound 0103 physical sciences Curing (chemistry) 010302 applied physics chemistry.chemical_classification Surfaces and Interfaces General Chemistry Polymer 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films chemistry Chemical engineering Anodic bonding Mechanical stability Adhesive 0210 nano-technology |
Zdroj: | Applied Surface Science. 414:163-170 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2017.03.168 |
Popis: | Cu/adhesive hybrid bonding is an attractive approach to three-dimensional (3D) integration because it provides direct Cu Cu vertical interconnects and high mechanical stability. However, Cu/adhesive hybrid bonding at below 200 °C is still challenging because of bonding temperature mismatch between Cu Cu and polymer adhesives and lacking of effective adhesive-compatible Cu surface activation methods. In this paper, we investigate and demonstrate a “Cu-first” hybrid bonding technique by using hydrogen(H)-containing formic acid (HCOOH) vapor prebonding surface treatment for the first time. In this technique, high-quality Cu Cu bonding is obtained at 180–200 °C that is close to or even lower than the temperature of subsequent adhesive curing. We experimentally investigate the effects of the H-containing HCOOH vapor treatment for Cu Cu bonding and cyclo-olefin polymer adhesive–adhesive bonding. This technique enables Cu/adhesive hybrid bonding at below 200 °C, promising smaller thermal stress, higher throughput, and lower cost comparing to the existing “adhesive-first” hybrid bonding method. |
Databáze: | OpenAIRE |
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