Hot electron spectroscopy: A novel method to study molecular semiconductor
| Autor: | Xiangnan Sun, Tongmou Geng, Qiong Zhou, Ke Meng, Jiaojiao Miao, Xuehua Zhou |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Microscope Photoemission spectroscopy Inverse photoemission spectroscopy Scanning tunneling spectroscopy 02 engineering and technology Electron 010402 general chemistry 01 natural sciences law.invention Biomaterials law Molecular film Materials Chemistry Electrical and Electronic Engineering Spectroscopy business.industry General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Semiconductor Optoelectronics 0210 nano-technology business |
| Zdroj: | Organic Electronics. 94:106164 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2021.106164 |
| Popis: | Molecular semiconductors, as the core component, determine the performance of different devices. It is essential to gain more knowledge of such materials. Hot electron spectroscopy, by applying a ballistic electron emission microscope and hot-electron transistor, has been demonstrated to be the most powerful method. This review concentrates on the achievements in several emerging fields, such as the interfacial energy level alignment and the charge transport characteristics in molecular film. As a versatile technique, hot electron spectroscopy has been found to be helpful in exploring the metal/molecule interface energy, the molecular levels, the electronic transport gap, and even the group structures. In comparison to the traditional techniques, such as ultraviolet photoemission spectroscopy, inverse photoemission spectroscopy, and scanning tunneling spectroscopy, this method offers in-situ characterizations, which makes the detection much more accurate and convenient. This review contributes to a deep comprehension of the intrinsic characteristics of molecular semiconductors and molecule-based devices. |
| Databáze: | OpenAIRE |
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