Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field
| Autor: | Somchai Ratanathammaphan, Chanchana Thanachayanont, R. Chumkaew, Suwat Sopitpan, Somsak Panyakeow, P. Lekwongderm, Songphol Kanjanachuchai, Noppadon Nuntawong, Visittapong Yordsri, Suwit Kiravittaya, Aniwat Tandaechanurat, Supachok Thainoi |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Phonon Peak shift 02 engineering and technology Substrate (electronics) 01 natural sciences Inorganic Chemistry Condensed Matter::Materials Science symbols.namesake Condensed Matter::Superconductivity 0103 physical sciences Nano Materials Chemistry 010302 applied physics Condensed Matter::Other business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Magnetic field Transmission electron microscopy symbols Optoelectronics Condensed Matter::Strongly Correlated Electrons 0210 nano-technology business Raman spectroscopy Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 512:198-202 |
| ISSN: | 0022-0248 |
| Popis: | We report on the Raman spectroscopy of self-assembled InSb nano-stripes grown on (0 0 1) GaSb substrate by molecular beam epitaxy. The nano-stripes have a truncated pyramidal shape with the typical dimension of ∼150 × 200 × 25 nm3. Raman spectroscopy is applied to probe the phonon-related properties of the InSb nano-stripes. Raman spectroscopy shows slight redshifts of the InSb-related phonon peaks when the excitation wavelength is increased. When a magnetic field is applied, blueshifts of these peaks are observed. Transmission electron microscopy is utilized to relate the structural information of the InSb nano-stripes and their Raman properties. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect