Molecular Dyanamics Simulation of Thermal Chemical Vapor Deposition for Hydrogenated Amorphous Silicon on Si (100) Substrate by Reactive Force-Field

Autor:	Takashi Tokumasu, Masaru Zaitsu, Takuya Mabuchi, Shigeo Yasuhara, Naoya Uene
Rok vydání:	2019
Předmět:	Amorphous silicon chemistry.chemical_compound Molecular dynamics Adsorption Materials science Hydrogen chemistry Silicon Thermal chemical vapor deposition Analytical chemistry chemistry.chemical_element Chemical vapor deposition Force field (chemistry)
Zdroj:	2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Popis:	We calculate a deposition process of hydrogenated amorphous silicon (a-Si:H) films on a silicon (100) substrate by reactive force-field molecular dynamics simulations. The influences of (a) substrate temperatures and (b) coverage of hydrogen atoms on the substrate on the adsorption probability are investigated, and it is found out that (a) the adsorption probability is almost constant for SiH 2 and SiH 3 , but decrease with increase in the substrate temperature for SiH 4 , (b) it decreases with the increase in hydrogen coverage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dd652cb9b67c90d682cfc973af6d666d https://doi.org/10.1109/sispad.2019.8870438 Zobrazit plný text záznamu