Effect of Ion Energy on Charge Loss From Floating Gate Memories
| Autor: | Ari Virtanen, Angelo Visconti, Giorgio Cellere, Reno Harboe-Sorensen, M. Bonanomi, S. Beltrami, Alessandro Paccagnella |
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| Rok vydání: | 2008 |
| Předmět: |
Physics
Nuclear and High Energy Physics Orders of magnitude (temperature) business.industry Cyclotron Electrical engineering Particle accelerator law.invention Ion Computational physics Non-volatile memory Nuclear Energy and Engineering law Single event upset Electrical and Electronic Engineering business Energy (signal processing) Space environment |
| Zdroj: | IEEE Transactions on Nuclear Science. 55:2042-2047 |
| ISSN: | 0018-9499 |
| Popis: | Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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