A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

Autor:	Misao Yoshimura, Yoshikazu Tanabe, Kazuya Nishihori, Masakatsu Mihara, Yoshiaki Kitaura, Tomohiro Nitta, Yorito Kakiuchi, Naotaka Uchitomi
Rok vydání:	1998
Předmět:	Materials science business.industry Amplifier Schottky barrier Transistor General Engineering General Physics and Astronomy Heterojunction Self-aligned gate law.invention law Adjacent channel Optoelectronics Breakdown voltage Field-effect transistor business
Zdroj:	Japanese Journal of Applied Physics. 37:3200
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.37.3200
Popis:	In this paper we report on a self-aligned gate buried-channel Al0.22Ga0.78As/GaAs heterostructure field-effect transistor (BC-HFET). The BC-HFET comprises a selectively ion-implanted channel and an undoped i-AlGaAs surface layer. In order to realize the buried channel heterostructure, a combined process of ion-implantation and epitaxial growth is developed. The post-implantation annealing before the epitaxial growth successfully reduces the interdiffusion at the heterointerface between the ion-implanted GaAs channel and the AlGaAs surface layer. The BC-HFET overcomes the disadvantages of a low breakdown voltage which exists in conventional self-aligned gate MESFETs. The BC-HFET exhibits a high breakdown voltage of 8 V and a high Schottky barrier height of 0.75 eV. The 1-mm-wide power BC-HFET demonstrates an output power of 18.2 dBm and a drain efficiency of 50% at a low adjacent channel leakage power of -59 dBc for a 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated input, for use as Personal Handy-phone System handsets.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dd5730001443202cccbaf9afb57a17bc https://doi.org/10.1143/jjap.37.3200 Zobrazit plný text záznamu