Nanometrology of Si Nanostructures Embedded in SiO2using Scanning Electron Microscopy
| Autor: | Hideo Namatsu, Akira Fujiwara, Kenji Kurihara, Masao Nagase |
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| Rok vydání: | 2003 |
| Předmět: |
Conventional transmission electron microscope
Reflection high-energy electron diffraction Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering Scanning confocal electron microscopy General Physics and Astronomy Nanotechnology Electron tomography Scanning transmission electron microscopy Optoelectronics Energy filtered transmission electron microscopy Electron beam-induced deposition High-resolution transmission electron microscopy business |
| Zdroj: | Japanese Journal of Applied Physics. 42:318-325 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | A novel scanning electron microscopy for the imaging of embedded nanostructures is proposed. The Si nanostructures embedded in SiO2 are clearly observed as bright contrasts at 30 kV electrons in the secondary electron mode. It is confirmed that the surface charging effect of SiO2 on an SOI substrate is modified by the existence of an embedded Si structure. The edge of the embedded structure creates a yield peak in the secondary electron profile. The comparison of the transmission electron microscopy (TEM) image and the scanning electron microscopy (SEM) image indicates that the peak position represents the edge position of the embedded structure with nano-order precision. The metrological method using this imaging technique is successfully applicable to the width measurement of sub-10-nm embedded Si structures. |
| Databáze: | OpenAIRE |
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