The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors

Autor:	Burag Yaglioglu, David C. Paine, Roderic Beresford, Hyo-Young Yeom
Rok vydání:	2005
Předmět:	Materials science Fabrication business.industry Amorphous solid Active matrix law.invention Gate oxide Thin-film transistor Sputtering law Optoelectronics business Saturation (magnetic) Transparent conducting film
Zdroj:	MRS Proceedings. 905
ISSN:	1946-4274 0272-9172
Popis:	Thin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (∼20cm2/Vs) and high on/off ratio (∼108) and, as such, appear to be well suited for active matrix TFT applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dd356d748613e694e36b2c5f3cd582db https://doi.org/10.1557/proc-0905-dd03-06 Zobrazit plný text záznamu Full text from SpringerLink